Solid-state imaging device

• Main Authors: OOTSUKA YOICHI, NOUDO SHINICHIRO
• Format: Patent
• Language: Chinese; English
• Published: 03.04.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

The present technique pertains to a solid-state image-pickup device configured so that oblique incidence light properties of image pickup pixels and AF properties of phase difference detection pixelscan be made excellent, to a method for producing the same, and to electronic equipment. A solid-state image-pickup device includes: a plurality of image pickup pixels arranged two-dimensionally in matrix; and phase difference detection pixels that are scattered among the image pickup pixels. The solid-state image-pickup device further includes: first microlenses that are formed so as to correspondto the image pickup pixels, respectively; a flattening film that is formed on the first microlenses and has a refractive index lower than that of the first microlenses; and second microlenses that are formed on the flattening film, only at positions above the phase difference detection pixels. The present technique can be applied to, for example, a CMOS solid-state image-pickup device. 本发明涉及固态成像器件及其制造方法以及电子设备，所述固态成像器件被构造为