Integrated circuit device

• Main Authors: CHENG POUNG, CHEN KAI-HSIUNG, HSIEH HUNGIH
• Format: Patent
• Language: Chinese; English
• Published: 27.03.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to an integrated circuit device. Methods of fabricating and using an overlay mark are provided. In some embodiments, the overlay mark includes an upper layer and a lower layer disposed below the upper layer. The lower layer includes a first plurality of compound gratings extending in a first direction and disposed in a first region of the overlay mark, each of the first plurality of compound gratings including one first element and at least two second elements disposed on one side of the first element, and a second plurality of compound gratings extending the first direction and disposed in a second region of the overlay mark, each of the second plurality of compound gratings including one third element and at least two fourth elements on one side of the third element. The first plurality of compound gratings is a mirror image of the second plurality of compound gratings. 本发明涉及一种集成电路装置，并提供制作与采用层叠标记的方法。在一些实施例中，层叠标记包括：上侧层；以及下侧层，位于上侧层下。下侧层包括：多个第一复合光栅，延伸于第一方向中并位于层叠标记的第一区中，且第一复合光栅的每一者包括一个第一单元