Silicon-based nitride five-junction solar cell containing superlattice structure

• Main Authors: ZHANG XIAOBIN, WANG YUEHUI, LIN KAIWEN
• Format: Patent
• Language: Chinese; English
• Published: 24.03.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a silicon-based nitride five-junction solar cell containing a superlattice structure, and the solar cell comprises a Si substrate which is a p-type or n-type Si single crystalwafer with two polished sides; the upper surface of the Si substrate is sequentially provided with a GaNP sub-cell, a GaNAsP sub-cell, a GaNAs/GaNP super-crystal lattice cell and a Si sub-cell from top to bottom according to a layered superposition structure. The upper surface of the Si substrate is provided with a GaN sub-cell, a GaN AsP sub-cell, a GaN/GaNP super-crystal lattice cell and a Si sub-cell. A GaNAs sub-cell is arranged on the lower surface of the Si substrate; the GaNP sub-cell and the GaNAsP sub-cell are connected through a fourth tunnel junction; wherein the GaNAsP sub-cell andthe GaNAs/GaNP super-crystal lattice cell are connected through a third tunnel junction, the GaNAs/GaNP super-crystal lattice cell and the Si sub-cell are connected through a second tunnel junction,and the Si substrate and th