Silicon dioxide layer, method for manufacturing same, composition for forming same, and electronic device

• Main Authors: SAKONG JUN, LIM WANHEE, NOH KUNBAE, JO HYEON SU, BAE JIN HEE, KWAK TAEKSOO, LEE CHUNGHEON, HWANG BYEONG GYU
• Format: Patent
• Language: Chinese; English
• Published: 24.03.2020
• Subjects: ADHESIVES; CHEMICAL PAINT OR INK REMOVERS; CHEMISTRY; COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS; CORRECTING FLUIDS; DYES; FILLING PASTES; INKS; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; POLISHES; USE OF MATERIALS THEREFOR; WOODSTAINS

Disclosed are a composition for forming a silicon dioxide layer, a method for manufacturing the silicon dioxide layer using the composition, the silicon dioxide layer manufactured by the method, and an electronic device including the silicon dioxide layer; the composition for forming the silicon dioxide layer comprising: a silicon-containing polymer including polysilazanes, polysilazanes, or combinations thereof; and a solvent, in which the silicon-containing polymer has a weight average molecular weight in terms of polystyrene of 4,000 g/mol to 13,000 g/mol and satisfies Equation 1, in whichEquation 1: A indicates a peak area of the silicon-containing polymer in a gel permeation chromatography curve in terms of weight average molecular weight of polystyrene from 2,700 g/mol to 9,000 g/mol, and B indicates the peak area of the silicon-containing polymer in the gel permeation chromatography curve in terms of weight average molecular weight of polystyrene from 200 g/mol to 2,700 g/mol.[Equation 1] 0.98< = B/A <