Manufacturing method of semiconductor device and semiconductor device

• Main Authors: LUO JIE, YUAN KEFANG
• Format: Patent
• Language: Chinese; English
• Published: 20.03.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a manufacturing method of a semiconductor device and the semiconductor device. The method comprises the following steps: providing a semiconductor substrate, and forming a firstmask material layer on the semiconductor substrate; the first mask material layer is patterned to form a first mask layer, the first mask layer is exposed out of an area, where a first metal layer isto be formed, on the semiconductor substrate, the area where the first metal layer is to be formed comprises a first part, and the first mask layer located on the first part is arranged to be of an intermittent structure; and etching the semiconductor substrate by taking the first mask layer as a mask. The invention provides a manufacturing method of a semiconductor device and the semiconductor device. And performing graphical control on the mask on which the first metal layer is formed to form an intermittent mask, thereby cutting off the first metal layer, enabling the cut-off first metal layer to be in contact with