High-reliability rectification device application chip with composite inner passive film single-groove structure

• Main Authors: CAO SUNGEN, WANG HAIBO, ZHU HAORAN, FENG YANING, HUANG ZHIXIANG
• Format: Patent
• Language: Chinese; English
• Published: 17.03.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a high-reliability rectification device application chip with a composite inner passivation film single-groove structure. A chip mesa adopts a single-groove design, the surfaceof the inner wall of a groove adopts a composite inner passivation layer structure, and a composite inner passivation layer is composed of a polycrystalline silicon film, a bottom layer high-purity nanoscale oxide film, a silicon nitride film and glass. The chip is composed of a single crystal semiconductor body on the middle layer, a chip body with a P-type boron junction region on the upper layer and an N-type phosphorus junction region on the lower layer, a table board, an upper electrode metal layer and a lower electrode metal layer. According to the invention, the problems of poor reliability and poor high-temperature characteristics of a protective film with glass as a passivation layer in a chip groove are solved. 本发明提供一种复合内钝化膜单沟槽结构高可靠性整流器件应用芯片，芯片台面的采用单沟槽设计，沟槽内壁表面采用复合内钝化层结构，复合内钝化层由多晶硅膜以及底层高纯度纳米级氧化膜、氮化硅膜、玻璃组