Bulk acoustic wave resonator and semiconductor device
The invention relates to the technical field of semiconductors, and discloses a bulk acoustic wave resonator and a semiconductor device. The bulk acoustic wave resonator comprises a substrate; and a multi-layer structure which is formed on the substrate, wherein the multi-layer structure sequentiall...
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Format | Patent |
Language | Chinese English |
Published |
06.03.2020
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Abstract | The invention relates to the technical field of semiconductors, and discloses a bulk acoustic wave resonator and a semiconductor device. The bulk acoustic wave resonator comprises a substrate; and a multi-layer structure which is formed on the substrate, wherein the multi-layer structure sequentially comprises a lower electrode layer, a doped piezoelectric layer and an upper electrode layer from bottom to top, a cavity is formed between the substrate and the multilayer structure, the electrode surface of at least one of the lower electrode layer and the upper electrode layer is provided with aconcave part extending towards the interior of the corresponding electrode layer and/or a convex part extending towards the exterior of the corresponding electrode layer, the doped piezoelectric layer includes a piezoelectric material doped with at least one rare earth element. According to the resonator, the cavity with the lower half cavity and the upper half cavity is arranged, the convex partand/or the concave part a |
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AbstractList | The invention relates to the technical field of semiconductors, and discloses a bulk acoustic wave resonator and a semiconductor device. The bulk acoustic wave resonator comprises a substrate; and a multi-layer structure which is formed on the substrate, wherein the multi-layer structure sequentially comprises a lower electrode layer, a doped piezoelectric layer and an upper electrode layer from bottom to top, a cavity is formed between the substrate and the multilayer structure, the electrode surface of at least one of the lower electrode layer and the upper electrode layer is provided with aconcave part extending towards the interior of the corresponding electrode layer and/or a convex part extending towards the exterior of the corresponding electrode layer, the doped piezoelectric layer includes a piezoelectric material doped with at least one rare earth element. According to the resonator, the cavity with the lower half cavity and the upper half cavity is arranged, the convex partand/or the concave part a |
Author | GAO YUAN SHANG QINGJIE LI LI MA JIE LYU XIN LIU QINGLIN DING XIANPENG LI LIANG QIAN LIXUN FENG LIDONG LIANG DONGSHENG |
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DocumentTitleAlternate | 体声波谐振器和半导体器件 |
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Snippet | The invention relates to the technical field of semiconductors, and discloses a bulk acoustic wave resonator and a semiconductor device. The bulk acoustic wave... |
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Title | Bulk acoustic wave resonator and semiconductor device |
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