Bulk acoustic wave resonator and semiconductor device

• Main Authors: MA JIE, LIANG DONGSHENG, SHANG QINGJIE, QIAN LIXUN, LIU QINGLIN, LI LI, FENG LIDONG, DING XIANPENG, LI LIANG, LYU XIN, GAO YUAN
• Format: Patent
• Language: Chinese; English
• Published: 06.03.2020
• Subjects: BASIC ELECTRONIC CIRCUITRY; ELECTRICITY; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS

The invention relates to the technical field of semiconductors, and discloses a bulk acoustic wave resonator and a semiconductor device. The bulk acoustic wave resonator comprises a substrate; and a multi-layer structure which is formed on the substrate, wherein the multi-layer structure sequentially comprises a lower electrode layer, a doped piezoelectric layer and an upper electrode layer from bottom to top, a cavity is formed between the substrate and the multilayer structure, the electrode surface of at least one of the lower electrode layer and the upper electrode layer is provided with aconcave part extending towards the interior of the corresponding electrode layer and/or a convex part extending towards the exterior of the corresponding electrode layer, the doped piezoelectric layer includes a piezoelectric material doped with at least one rare earth element. According to the resonator, the cavity with the lower half cavity and the upper half cavity is arranged, the convex partand/or the concave part a