Resonator and filter
The invention relates to the technical field of semiconductors, and discloses a stacked acoustic resonator comprising a bridge part and a filter. The resonator includes a substrate; a multi-layer structure which is formed on the substrate, wherein the multi-layer structure sequentially comprises a f...
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Main Authors | , , , , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
06.03.2020
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to the technical field of semiconductors, and discloses a stacked acoustic resonator comprising a bridge part and a filter. The resonator includes a substrate; a multi-layer structure which is formed on the substrate, wherein the multi-layer structure sequentially comprises a first electrode layer, a first piezoelectric layer, a second electrode layer, a second piezoelectriclayer and a third electrode layer from bottom to top; and a bridge portion provided between the first electrode layer and the third electrode layer, wherein a cavity is formed between the substrate and the multi-layer structure, and the cavity comprises a lower half cavity located below the upper surface of the substrate and an upper half cavity which exceeds the upper surface of the substrate andprotrudes towards the multi-layer structure. According to the resonator, the cavity with the lower half cavity and the upper half cavity is arranged, the lower half cavity is integrally positioned below the upper surface of t |
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Bibliography: | Application Number: CN201910329129 |