Semiconductor structure and forming method thereof

• Main Authors: LIU LIYUAN, LUO JIE, YUAN KEFANG
• Format: Patent
• Language: Chinese; English
• Published: 03.03.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the steps: a substrate is provided, wherein a to-be-etched layer is formed on the substrate; a graphical organic mask layer is formed on the to-be-etched layer; an inorganic protective layer is formed on the surface of the organic mask layer, wherein the inorganic protective layer and the organic mask layer are used for forming a mask structure layer; and with the mask structure layer as a mask, the to-be-etched layer is etched. Through the inorganic protective layer, the etching resistance of the mask structure layer is improved; subsequently, when the to-be-etched layer is etched by taking the mask structure layer as a mask, the loss of the process of etching the to-be-etched layer to the organic mask layer can be reduced, the organic mask layer is prevented from being completely consumed too early, the organic mask layer can play a due mask role in the process of etching theto-be-etched layer, and t