Interdigital electrode structure polarization dependent narrow-band detector, and preparation and application thereof

• Main Authors: WAN HAOWEI, ZHANG JIANBING, LIU HUAN, GUO SONG, TAN XIAOCHAO, YI FEI
• Format: Patent
• Language: Chinese; English
• Published: 14.02.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention belongs to the field of polarization-dependent narrow-band detectors, and particularly relates to an Interdigital electrode structure polarization dependent narrow-band detector, and preparation and application thereof. The detector comprises a substrate, a metal backboard, a silicon dioxide layer, an interdigital electrode structure array layer and a colloid quantum dot layer from bottom to top, wherein the interdigital electrode structure array layer is formed by vertically and horizontally arranging a plurality of interdigital electrode unit structures, each interdigital electrode unit structure comprises a hollow structure and strip-shaped metal on the two sides of the hollow structure, and each hollow structure comprises hollow strip-shaped structures at the two ends anda hollow widening structure in the middle. The combined action of the local surface plasmon resonance effect generated on the interdigital electrode structure array and the resonant cavity enable theenergy of the light with