Magnetic memory, data storage device and control method

The invention provides a magnetic memory, a data storage device and a control method. The magnetic memory comprises a strong spin orbit coupling layer and a plurality of magnetic tunnel junctions which are arranged on the strong spin orbit coupling layer and electrically contacted with the strong sp...

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Bibliographic Details
Main Authors ZHAO WEISHENG, WANG ZHAOHAO, ZHOU HAOCHANG, LIU TONGXI
Format Patent
LanguageChinese
English
Published 14.02.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:The invention provides a magnetic memory, a data storage device and a control method. The magnetic memory comprises a strong spin orbit coupling layer and a plurality of magnetic tunnel junctions which are arranged on the strong spin orbit coupling layer and electrically contacted with the strong spin orbit coupling layer, wherein the strong spin orbit coupling layer is provided with a first inputelectrode and a first output electrode which are connected with the strong spin orbit coupling layer corresponding to two sides of each magnetic tunnel junction; and the magnetic tunnel junction hasperpendicular magnetic anisotropy, the ratio of the length to the width of the magnetic tunnel junction is not 1, and a preset included angle is formed between the symmetry axis of the magnetic tunneljunction and the symmetry axis of the corresponding strong spin orbit coupling layer. The magnetic memory provided by the invention does not need an additional magnetic field, a control circuit of the memory is simplified, and
Bibliography:Application Number: CN201910940252