Technology for preparing composite dielectric plate based on low dielectric constant turning film

• Main Authors: GAO SHUJIAN, WEI XI, ZHANG WEI, PANG ZIBO, JI XIUFENG
• Format: Patent
• Language: Chinese; English
• Published: 04.02.2020
• Subjects: PERFORMING OPERATIONS; PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCESIN A PLASTIC STATE; TRANSPORTING; WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL

The invention discloses a technology for preparing a composite dielectric plate based on a low dielectric constant turning film. According to the technology, a perfluoro resin turning film which has avolume fraction of 20.0 to 65.0%, has low dielectric constant, and contains silicon dioxide ceramic powder, a glass fibric dip piece which has a volume fraction of 9.0 to 70.0% and contains polytetrafluoroethylene, and a perfluoro resin turning film which has a volume fraction of 10.0 to 56.5% which have the same breadth are stacked to form a dielectric layer in an up-down symmetrical mode; a copper foil covers the upper and lower surfaces of the dielectric layer; and a sintering process which has the temperature of 360 DEG C to 390 DEG C , the pressure of 3 to 13 MPa, and the hot pressing time of 2 to 5 h is adopted, so that the perfluoro resin turning film is fused, spliced, and eventually shaped to prepare the composite dielectric plate with the dielectric constant of 2.14 to 2.74. Theplate has the characteris