Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance

An insertion layer (103) for perpendicular spin orbit torque (SOT) memory devices between the SOT electrode (102) and the free magnetic layer (112), memory devices and computing platforms employing such insertion layers, and methods for forming them are discussed. The insertion layer is predominantl...

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Bibliographic Details
Main Authors GOSAVI TANAY, OGUZ KAAN, WIEGAND CHRISTOPHER, RAHMAN TOFIZUR, YOUNG IAN, BUFORD BENJAMIN, SATO NORIYUKI, SMITH ANGELINE, MANIPATRUNI SASIKANTH, O'BRIEN KEVIN
Format Patent
LanguageChinese
English
Published 07.01.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An insertion layer (103) for perpendicular spin orbit torque (SOT) memory devices between the SOT electrode (102) and the free magnetic layer (112), memory devices and computing platforms employing such insertion layers, and methods for forming them are discussed. The insertion layer is predominantly tungsten and improves thermal stability and perpendicular magnetic anisotropy in the free magneticlayer. 讨论了用于SOT电极和自由磁性层之间的垂直自旋轨道矩(SOT)存储器件的插入层，采用这种插入层的存储器件和计算平台，以及形成它们的方法。插入层主要是钨，并改善了自由磁性层中的热稳定性和垂直磁各向异性。
Bibliography:Application Number: CN201910451081