Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory

• Main Authors: GOSAVI TANAY, OGUZ KAAN, WIEGAND CHRISTOPHER, RAHMAN MD TOFIZUR, BUFORD BENJAMIN, YOUNG IAN, SATO NORIYUKI, LIN CHIAING, MANIPATRUNI SASIKANTH, SMITH ANGELINE, O'BRIEN KEVIN
• Format: Patent
• Language: Chinese; English
• Published: 07.01.2020
• Subjects: ELECTRICITY

Embodiments herein relate to a system, apparatus, and/or process for producing a spin orbit torque (SOT) electrode (102) that includes a first layer (102a) with a first side to couple with a free layer (110) of a magnetic tunnel junction (MTJ) (108) and a second layer (102b) coupled with a second side of the first layer opposite the first side, where a value of an electrical resistance in the first SOT layer is lower than a value of an electrical resistance in the second SOT layer and where a current applied to the SOT electrode is to cause current to preferentially flow in the first SOT layerto cause a magnetic polarization of the free layer to change directions. During production of the SOT electrode, the second layer may act as an etch stop. 本文中的实施例涉及用于制造自旋轨道矩（SOT）电极的系统、设备和/或过程，SOT电极包含：具有与磁性隧道结（MTJ）的自由层耦合的第一面的第一层；以及与第一层的与第一面相对的第二面耦合的第二层，其中第一SOT层中的电阻的值低于第二SOT层中的电阻的值，并且其中施加到SOT电极的电流将使得电流优先在第一SOT层中流动，以使得自由层的磁极化改变方向。在SOT电极的制造期间，第二层可充当蚀刻停止处。