DEPOSITION OF METAL SILICIDE LAYERS ON SUBSTRATES AND CHAMBER COMPONENTS

• Main Authors: KULSHRESHTHA PRASHANT KUMAR, GADRE MILIND, MIN XIAOQUAN, LEE KWANGDUK DOUGLAS, WANG JIARUI, CONNORS PAUL
• Format: Patent
• Language: Chinese; English
• Published: 27.12.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hard mask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support. 本公开的实施方式大体上涉及用于在基板和腔室部件上沉积金属硅化物层的方法和装置。在一个实施方式中，形成硬掩膜的方法包括：将具有目标层的基板定位在处理腔室内、在所述目标层上形成包括金属硅化物的种晶层和在所述种晶层上沉积钨基主体层，其中所述金属硅