Heterogeneous integrated radio frequency amplifier structure

• Main Authors: SUN BING, DING WUCHANG, CHANG HUDONG, LIU HONGGANG, JIN ZHI, YANG FENG
• Format: Patent
• Language: Chinese; English
• Published: 27.12.2019
• Subjects: AMPLIFIERS; BASIC ELECTRONIC CIRCUITRY; ELECTRICITY

The invention discloses a heterogeneous integrated radio frequency amplifier structure which comprises a first compound semiconductor device, a second compound semiconductor device, a third compound semiconductor device and a fourth compound semiconductor device. A first silicon-based PMOS device and a second silicon-based PMOS device; the source electrode of the first silicon-based PMOS device isconnected with the collector electrode of the third compound semiconductor device, and the source electrode of the second silicon-based PMOS device is connected with the collector electrode of the fourth compound semiconductor device; the source electrode of the first silicon-based PMOS device and the collector electrode of the third compound semiconductor device are connected with the first endof the voltage output end, and the source electrode of the second silicon-based PMOS device and the collector electrode of the fourth compound semiconductor device are connected with the second end ofthe voltage output end; th