Semiconductor imaging device and forming method thereof

• Main Authors: WU WEI CHUANG, YAUNG DUN-NIAN, HUNG FENGI, WANG CHEN-JONG, HSU WEING, SHIU FENG-JIA, CHANG CHUN-WEI, LIU JENNG, HUANG YIMIN, TAKAHASHI SEIJI, SZE JHY-JYI
• Format: Patent
• Language: Chinese; English
• Published: 10.12.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region. An embodiment of the invention also provides a forming method of the semiconductor imaging device. 在一些实施例中，提供了像素传感器。像素传感器包括布置在半导体衬底中的第一光电探测器。第二光电探测器布置在半导体衬底中，其中，第一基本直线轴与第一光电探测器的中心