SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

• Main Authors: YAHIRO SHUNICHI, IMOTO NAOKI, KUBO MAKOTO
• Format: Patent
• Language: Chinese; English
• Published: 26.11.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention provides a technique capable of suppressing the occurrence of unevenness in substrate processing. According to one embodiment, a substrate processing apparatus includes a chamber, a plurality of gas supply units, and a control unit. The chamber accommodates a substrate and is capable of holding the substrate therein in a reduced-pressure atmosphere. The gas supply units are used for supplying gas into the cavity. The control unit controls the supply of gas by each of the plurality of gas supply units. The control unit increases the number of gas supply units that supply gas after starting the supply of gas from one or more gas supply units among the plurality of gas supply units when returning the interior of the chamber to atmospheric pressure. 本发明提供一种能够抑制在基片处理中发生不均的技术。实施方式的基片处理装置包括腔室、多个供气部和控制部。腔室用于收纳基片，能够在减压气氛在内部保持基片。供气部用于对腔室内供给气体。控制部分别控制多个供气部进行的气体的供给。控制部在使腔室内回到常压时，开始从多个供气部中的一个以上的供气部供给气体后，增加供给气体的供气部的数量。