Optoelectronic Semiconductor Device and Method of Manufacturing an Optoelectronic Semiconductor Device

The present invention relates to an optoelectronic semiconductor device having a semiconductor body. The semiconductor body comprises a first region of a first conductive type, an active region, a second region of a second conductive type and a coupling-out surface, wherein the first region, the act...

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Bibliographic Details
Main Authors ALFRED LELL, HARALD KONIG, JENS EBBECKE, CLEMENS VIERHEILIG, SVEN GERHARD
Format Patent
LanguageChinese
English
Published 19.11.2019
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Summary:The present invention relates to an optoelectronic semiconductor device having a semiconductor body. The semiconductor body comprises a first region of a first conductive type, an active region, a second region of a second conductive type and a coupling-out surface, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active regionextends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, wherein the coupling-out surface is arranged plane-parallel to the rear surface, and wherein the coupling-out surface and the rear surface of the semiconductor body are produced by an etching process. The present invention provides a method for manufacturing an optoelectronic semiconductor device. 本发明涉及一种具有半导体本体的光电子半导体器件,半导体本体包括第一传导类型的第一区域、设计用于产生电磁辐射的有源区域和第二传导类型的第二区域以及设置用于耦合输出电磁辐射的耦合输出面。第一区域、有源区域和第二区域沿着堆叠方向设置。有源区域从与耦合输出面相对置的后侧面沿着纵向方向延伸至耦合输出面,
Bibliography:Application Number: CN201910393811