POROUS SEMICONDUCTOR HANDLE SUBSTRATE

• Main Authors: FANELLI STEPHEN, HAMMOND RICHARD
• Format: Patent
• Language: Chinese; English
• Published: 15.11.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An integrated circuit (IC) may include an active device layer on a front-side surface of a semiconductor device substrate. The IC may also include a front-side dielectric layer having a first surfaceopposite a second surface, the first surface contacting the active device layer. The IC may further include a porous semiconductor handle substrate contacting the second surface of the front-side dielectric layer. The porous semiconductor handle substrate may be uniformly doped. 集成电路(IC)可以包括在半导体器件衬底的正面表面上的有源器件层。IC还可以包括正面电介质层，该正面电介质层具有与第二表面相对的第一表面，第一表面接触有源器件层。IC还可以包括与正面电介质层的第二表面接触的多孔半导体处理衬底。多孔半导体处理衬底可以是均匀掺杂的。