Double-sided layout structure for high power density GaN power module

• Main Authors: CHEN ZHENHAI, YAN DAWEI, NING RENXIA, BAO JIE, ZHAN LINSONG, XU YUAN, HUANG WEI, LYU HAIJIANG
• Format: Patent
• Language: Chinese; English
• Published: 12.11.2019
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; PRINTED CIRCUITS

The invention discloses a double-sided layout structure for a high power density GaN power module, which includes an input high voltage area, a transformer area, an output voltage area, and a low voltage power supply area. The input high voltage area, the transformer area, and the output voltage area are distributed on the front side, and the low voltage power supply area is distributed on the back side; PWM pulse width signals, voltage detection signals, current detection signals, and temperature detection signals between the front side and the back side are connected through a through hole.The double-sided layout structure of the GaN power module provided by the invention achieves high frequency and miniaturization of the power module by ensuring that the GaN device works in a safe areastate, thereby achieving high density power integration and high efficiency, and the structure can be widely applied to a high density power module by adopting the GaN power device for power integration. 本发明公开了一种用于高功率密度GaN功率模