AlGaN-based vertical junction MSM ultraviolet detector and preparation method thereof

• Main Authors: WANG LIANCHENG, LONG LINYUN, ZHU WENHUI, HU ZELIN, LI TAO
• Format: Patent
• Language: Chinese; English
• Published: 12.11.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses an AlGaN-based vertical junction MSM ultraviolet detector and a preparation method thereof. The AlGaN-based vertical junction MSM ultraviolet detector comprises a substrate; one side of the substrate is provided with an AlXGa1-XN ultraviolet light absorbing layer and an electrode in sequence from inside to outside; the electrode is half of a normal interdigital electrode and is deposited on the surface of the AlXGa1-XN ultraviolet light absorbing layer; the other side of the substrate is provided with a region electrode; the region electrode and the interdigital electrode are made of the same material; the region electrode is layered; and the region electrode, the substrate and the AlXGa1-XN ultraviolet light absorbing layer have the same cross sections. Through depositing the single interdigital electrode on the ultraviolet light absorbing layer, blocking and absorption of part of the incident light by the metal electrode are reduced; the region electrode is prepared below the substra