SUBSTRATE PROCESSING APPARATUS AND METHOD

A substrate processing apparatus with a reaction chamber and a substrate holder constructed and arranged to hold at least one substrate in said reaction chamber is provided. A first and second gas injector provides a process gas to the interior of the reaction chamber from a source pipe. A gas contr...

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Bibliographic Details
Main Author KLAVER ARJEN
Format Patent
LanguageChinese
English
Published 05.11.2019
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Summary:A substrate processing apparatus with a reaction chamber and a substrate holder constructed and arranged to hold at least one substrate in said reaction chamber is provided. A first and second gas injector provides a process gas to the interior of the reaction chamber from a source pipe. A gas control system provides a flow of process gas from the source pipe to the first injector while restricting a flow of the same process gas from the source pipe to the second injector. 提供一种衬底处理设备,所述衬底处理设备具有反应室和衬底固持器,所述衬底固持器构造并布置成在所述反应室中固持至少一个衬底。第一和第二气体注射器从源管向所述反应室的内部提供处理气体。气体控制系统实现处理气体从所述源管流到所述第一注射器,同时限制所述同一处理气体从所述源管流到所述第二注射器。
Bibliography:Application Number: CN201910310803