BULK ACOUSTIC WAVE RESONATORS HAVING LOW ATOMIC WEIGHT METAL ELECTRODES

• Main Authors: LARSON III JOHN D, BRADLEY PAUL
• Format: Patent
• Language: Chinese; English
• Published: 29.10.2019
• Subjects: BASIC ELECTRONIC CIRCUITRY; ELECTRICITY; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS

A BAW resonator comprises: a substrate comprising an acoustic reflector; a first electrode disposed over the acoustic reflector, and comprising a first electrode layer comprising a comparatively highacoustic impedance material, and a second electrode layer comprising a comparatively low acoustic impedance; a piezoelectric layer disposed over the second electrode layer; and a second electrode disposed over the piezoelectric layer, and comprising a third electrode layer comprising the low acoustic impedance, and a fourth electrode layer comprising the comparatively high acoustic impedance material and being disposed directly on the piezoelectric layer. A total thickness of an acoustic stack of the BAW resonator is approximately lambda/2, where lambda is a wavelength corresponding to a thickness extensional resonance frequency of the BAW resonator. 本发明涉及具有低原子量金属电极的体声波谐振器。一种BAW谐振器包括：衬底，其包括声反射器；第一电极，其安置在所述声反射器之上且包括第一电极层及第二电极层，所述第一电极层包括相对较高声阻抗材料，且所述第二电极层包括相对较低声阻抗；压电层，其安置在所述第二电极层之上；及第二电极，其安置在所述压电层之上且包括第三电极层及第四电极层，所述