Ion source with dual ionization chambers

The invention discloses an ion source with dual ionization chambers. The ion source includes a first ionization chamber, a first absorber, a second ionization chamber, a second absorber and a suppression electrode, wherein the first absorber is located between the first ionization chamber and the se...

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Bibliographic Details
Main Author CHEN ZHANGFA
Format Patent
LanguageChinese
English
Published 25.10.2019
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Summary:The invention discloses an ion source with dual ionization chambers. The ion source includes a first ionization chamber, a first absorber, a second ionization chamber, a second absorber and a suppression electrode, wherein the first absorber is located between the first ionization chamber and the second ionization chamber, the second absorber is located between the second ionization chamber and the suppression electrode, gas inputted to the first ionization chamber is ionized into preliminary plasmas, the preliminary plasmas are aspirated by the first absorber and transmitted to the second ionization chamber, the preliminary plasmas are ionized into multivalent plasmas in the second ionization chamber, and the multivalent plasmas are aspirated by the second absorber and transmitted to thesuppression electrode. The ion source is advantaged in that gas molecules are preliminarily ionized by the first ionization chamber, the preliminary plasmas are ionized by the second ionization chamber into the multivalent pl
Bibliography:Application Number: CN201910688082