Manufacturing method of thin film transistor, substrate and display device

• Main Authors: ZHUO ENZONG, XIA YUMING, YONG WANFEI
• Format: Patent
• Language: Chinese; English
• Published: 22.10.2019
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

The present invention provides a manufacturing method of a thin film transistor, a substrate and a display device. The manufacturing method of the thin film transistor comprises the steps of: forminga thin film transistor on a substrate, wherein the thin film transistor comprises a gate layer, a gate insulating layer, an active layer, an ohmic contact layer and a source-drain metal layer which are stacked in order; coating the surface, far away from the ohmic contact layer, of the source-drain metal layer with photoresist, performing exposure and development for the photoresist through a first photomask to form a photoresist layer, wherein the photoresist layer has a first region and a second region; and performing first wet etching and first dry etching for the source-drain metal layer,the ohmic contact layer and the active layer which are exposed at the second region, then performing pre-treatment of the photoresist layer at the first region by utilizing oxygen, wherein the concentration of the oxygen is 40