INTERCONNECT LAYER CONTACT AND METHOD FOR IMPROVED PACKAGED INTEGRATED CIRCUIT RELIABILITY

Packaged photosensor ICs are made by fabricating an integrated circuit (IC) with multiple bondpads; forming vias from IC backside through semiconductor to expose a first layer metal; depositing conductive metal plugs in the vias; depositing interconnect metal; depositing solder-mask dielectric over...

Full description

Saved in:
Bibliographic Details
Main Authors ZHANG MING, QIAN YIN, TAI DYSON H, MIAO CHIAUN
Format Patent
LanguageChinese
English
Published 08.10.2019
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Packaged photosensor ICs are made by fabricating an integrated circuit (IC) with multiple bondpads; forming vias from IC backside through semiconductor to expose a first layer metal; depositing conductive metal plugs in the vias; depositing interconnect metal; depositing solder-mask dielectric over the interconnect metal and openings therethrough; forming solder bumps on interconnect metal at theopenings in the solder-mask dielectric; and bonding the solder bumps to conductors of a package. The photosensor IC has a substrate; multiple metal layers separated by dielectric layers formed on a first surface of the substrate into which transistors are formed; multiple bondpad structures formed of at least a first metal layer of the metal layers; vias with metal plugs formed through a dielectric over a second surface of the semiconductor substrate, interconnect metal on the dielectric forming connection shapes, and shapes of the interconnect layer coupled to each conductive plug and to solder bumps. 封装的光电传感器IC通过以下制
Bibliography:Application Number: CN201910064227