WRAP-AROUND GATE STRUCTURES AND METHODS OF FORMING WRAP-AROUND GATE STRUCTURES

• Main Authors: FANELLI STEPHEN ALAN, VEDULA RAVI PRAMOD KUMAR, AZZAZY FARID
• Format: Patent
• Language: Chinese; English
• Published: 01.10.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes a channel structure that includes a first oxide layer, a second oxide layer, and a channel region between the first oxide layer and the second oxide layer. The semiconductor device includes a first gate structure proximate to at least three sides of the channel structure. The semiconductor device includes a second gate structure proximate to at least a fourth side of the channel structure. 一种半导体器件包括沟道结构，该沟道结构包括第一氧化物层、第二氧化物层和在第一氧化物层与第二氧化物层之间的沟道区域。该半导体器件包括在沟道结构的至少三个侧面附近的第一栅极结构。该半导体器件包括在沟道结构的至少第四侧面附近的第二栅极结构。