Method for preparing V type doped copper indium gallium selenium absorbing layer by PVD (Physical Vapor Deposition) method

• Main Authors: HUANG HONGLI, WU JIANBANG, CHEN SHAOYI, ZOU ZHENFENG, LAO HONGBIN, CHENG ZHIHUA, CHEN FANGCAI
• Format: Patent
• Language: Chinese; English
• Published: 20.09.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses a method for preparing a V type doped copper indium gallium selenium absorbing layer by a PVD (Physical Vapor Deposition) method. The method comprises the following steps: S1, preparing a stainless steel flexible material as a substrate, depositing a first layer of copper indium gallium film on the surface of the substrate by the PVD sputtering method, and meanwhile selenizing under low temperature to form a first copper indium gallium selenium film layer; S2, depositing a second layer of copper indium gallium film on the first copper indium gallium selenium film layer by the PVD sputtering method, and selenizing under high temperature to form a second copper indium gallium selenium film absorbing layer; and S3, depositing a third layer of copper indium gallium film on a second layer of copper indium gallium selenium film by the PVD sputtering method, and performing low-temperature thermal annealing and selenizing to form a third copper indium gallium selenium film interface layer. Acc