BACK GATE TUNING CIRCUITS

The invention relates to back gate tuning circuits. The present disclosure generally relates to semiconductor structures and, more particularly, to back gate tuning circuits and methods of manufacture. The method includes applying a voltage to a back gate of a device; and selectively controlling the...

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Bibliographic Details
Main Authors JUTTNER MAXIMILIAN, HONTSCHEL JAN, OTTO MICHAEL
Format Patent
LanguageChinese
English
Published 16.08.2019
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
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Summary:The invention relates to back gate tuning circuits. The present disclosure generally relates to semiconductor structures and, more particularly, to back gate tuning circuits and methods of manufacture. The method includes applying a voltage to a back gate of a device; and selectively controlling the applied voltage to deactivate at least one trap within an insulating layer of the device to reducenoise contribution from the at least one trap. 本发明涉及背栅调谐电路。本公开总体上涉及半导体结构，更特别地，涉及背栅调谐电路和制造方法。该方法包括向器件的背栅施加电压；以及选择性地控制所施加的电压以使器件的绝缘层内的至少一个陷阱去激活以减少来自该至少一个陷阱的噪声贡献。
Bibliography:Application Number: CN201910000572