Coil structure and method for magnetic-field applied Czochralski of single crystals

• Main Authors: LIU LIMING, LIU SAIBO, FU LINJIAN, TANG HONGMING
• Format: Patent
• Language: Chinese; English
• Published: 16.08.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to a coil structure and a method for magnetic-field applied Czochralski of single crystals, and belongs to the technical field of semiconductor manufacturing. The coil structurecomprises a first coil and a second coil, wherein the first coil and the second coil are vertically and coaxially arranged, an auxiliary coil is arranged just between the first coil and the second coil, and is arranged coaxially with the first coil, and during electrifying, the currents in the first coil and the second coil are opposite to each other. According to the present invention, by additionally arranging the auxiliary coil between the first coil and the second coil, based on a pair of the coaxial reverse coils, the magnetic field generated by the auxiliary coil and the magnetic field generated by the pair of the reverse coils are superimposed so as to enhance the strength of the magnetic field and improve the quality of the single crystal silicon; and by arranging the auxiliary coil to adjust and optimize