GAAS SUBSTRATE AND PRODUCTION METHOD THEREFOR

• Main Authors: FUJIWARA SHINYA, HIGUCHI YASUAKI
• Format: Patent
• Language: Chinese; English
• Published: 09.08.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A GaAs substrate having a first surface. The number of particles, per cm2 of the first surface, present on the first surface and having a long diameter of at least 0.16 [mu]m and the number of damages, per cm2 of a second surface formed by etching the first surface 0.5 [mu]m in the depth direction, present on the second surface and having a long diameter of at least 0.16 [mu]m total no more than 2.1. 本发明公开了一种具有第一表面的GaAs衬底。存在于所述第一表面中的长径0.16μm以上的粒子在每cm所述第一表面中的数量和存在于第二表面中的长径0.16μm以上的损伤在每cm第二表面中的数量的总和为小于或等于2.1，所述第二表面通过在深度方向上腐蚀所述第一表面0.5μm而形成。