Semiconductor device, manufacturing method therefor, and equipment

• Main Author: SHOYAMA TOSHIHIRO
• Format: Patent
• Language: Chinese; English
• Published: 06.08.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a semiconductor device, a manufacturing method therefor, and equipment. The method of manufacturing the semiconductor device, includes forming a first trench on a side of a first face of a semiconductor substrate having the first face and a second face, forming a gettering region by implanting ions in the semiconductor substrate through the first trench, and forming a second trench on the side of the first face of the semiconductor substrate after the forming the gettering region. A depth of a bottom surface of the second trench with reference to the first face is smaller than a depth of a bottom surface of the first trench with reference to the first face. 本申请涉及半导体装置、半导体装置的制造方法以及设备。一种制造半导体装置的方法，包括在具有第一面和第二面的半导体基板的第一面的一侧形成第一沟槽，通过经由第一沟槽在半导体基板中注入离子形成吸杂区域，以及在形成吸杂区域之后，在半导体基板的第一面的一侧形成第二沟槽。第二沟槽的底表面相对于第一面的深度小于第一沟槽的底表面相对于第一面的深度。