Semiconductor device

• Main Authors: LEE JUNG HAN, KIM BYOUNG GI, PARK JAE HYUN, HWANG INCHAN, JEON YEONGMIN, SHIN WOOCHEOL, LEE YUNIL, PARK SUNGCHUL, HA DAEWON
• Format: Patent
• Language: Chinese; English
• Published: 16.07.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor substrate includes a plurality of gate electrodes crossing active patterns on a substrate and extending in a second direction, the gate electrodes spaced apart in the second directionfrom each other, a gate separation pattern having a major axis in the first direction and between two of the gate electrodes, the two of the gate electrodes adjacent to each other in the second direction, and a plurality of gate spacers covering sidewalls of respective ones of the gate electrodes, the gate spacers crossing the gate separation pattern and extending in the second direction. The gateseparation pattern includes a lower portion extending in the first direction, an intermediate portion protruding from the lower portion and having a first width, and an upper portion between two adjacent gate spacers and protruding from the intermediate portion, the upper portion having a second width less than the first width. 一种半导体器件包括：多个栅电极，在衬底上交叉有源图案并沿第二方向延伸，所述多个栅电极在第一方向上彼此间隔开；栅极分隔图案，具有在第一方向上的长轴并且在所述多个栅电极中的两个栅电极之间，所述多