PLASMA PROCESSING DEVICE
The present invention provides a plasma processing device. The plasma processing device comprises a chamber, a plurality of dielectric windows covering a top portion of the chamber, a lid frame supporting the dielectric windows on a same plane, a plurality of supporting bars supporting a top portion...
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
16.07.2019
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention provides a plasma processing device. The plasma processing device comprises a chamber, a plurality of dielectric windows covering a top portion of the chamber, a lid frame supporting the dielectric windows on a same plane, a plurality of supporting bars supporting a top portion of the lid frame, and a plurality of antennas positioned above the dielectric windows, in which theantennas include a first antenna positioned inside an area defined by the supporting bars and having a loop form, and a second antenna positioned outside the area defined by the supporting bars and having a loop form, and a first current direction in the first antenna and a second current direction in the second antenna are the same as each other.
提供了一种等离子体处理装置。所述等离子体处理装置包括:腔室;多个介电窗,覆盖腔室的顶部;盖框架,在同一平面上支撑所述多个介电窗;多个支撑杆,支撑盖框架的顶部;以及多个天线,位于所述多个介电窗上方,其中,所述多个天线包括位于由所述多个支撑杆限定的区域内部并具有环形形式的第一天线以及位于由所述多个支撑杆限定的区域外部并具有环形形式的第二天线,并且第一天线中的第一电流方向与第二天线中的第二电流方向彼此相同。 |
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Bibliography: | Application Number: CN201910017949 |