Vertical-structure blue light-emitting diode and preparation method thereof

• Main Authors: YUAN JIALEI, NI SHUYU, WANG YONGJIN
• Format: Patent
• Language: Chinese; English
• Published: 09.07.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to the field of illumination, display and optical communication, in particular to a vertical structure blue light emitting diode and a preparation method thereof. The vertical-structure blue light-emitting diode comprises a conductive substrate, a metal reflection layer, a nitride epitaxial layer, an N type electrode and a P type electrode, wherein the conductive substrate has a first surface and a second surface opposite to the first surface; the metal reflection layer is positioned on the first surface; the nitride epitaxial layer is positioned on the surface of the metal reflection layer, wherein the nitride epitaxial layer comprises a P type GaN layer, a quantum well layer, a preparation layer and an N-type GaN layer which are stacked in sequence in the directionof the conductive substrate; the thickness of the nitride epitaxial layer is less than that of the blue light wave; the N-type electrode is positioned on the surface of the N-type GaN layer; and the p-type electrode is positi