ELECTROMAGNETIC RADIATION DETECTOR COMPRISING CHARGE TRANSPORT ACROSS A BONDED INTERFACE

Monolithic CMOS integrated pixel detector (10, 20, 30, 260, 470, 570), and systems and methods are provided for the detection and imaging of electromagnetic radiation with high spectral and spatial resolution. Such detectors comprise a Si wafer with a CMOS processed readout bonded to an absorber waf...

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Bibliographic Details
Main Author VON KANEL HANS
Format Patent
LanguageChinese
English
Published 02.07.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Monolithic CMOS integrated pixel detector (10, 20, 30, 260, 470, 570), and systems and methods are provided for the detection and imaging of electromagnetic radiation with high spectral and spatial resolution. Such detectors comprise a Si wafer with a CMOS processed readout bonded to an absorber wafer in an electrically conducting covalent wafer bond. The pixel detectors, systems and methods are used in various medical and non-medical types of applications. 提供了用于以高频谱和空间分辨率对电磁辐射进行检测和成像的单片CMOS集成像素检测器(10，20，30，260，470，570)以及系统和方法。这样的检测器包括Si晶片，所述Si晶片具有在导电共价晶片键合中被键合到吸收体晶片的CMOS处理的读出晶片。所述像素检测器、系统和方法被使用在各种医疗和非医疗类型的应用中。
Bibliography:Application Number: CN201780053053