INTEGRATED EPITAXIAL METAL ELECTRODES

• Main Authors: LEBBY MICHAEL, CHIN PATRICK, CLARK ANDREW, PELZEL RODNEY, DARGIS RYTIS
• Format: Patent
• Language: Chinese; English
• Published: 02.07.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure (100),comprising a substrate (102), a first rare earth oxide layer (104) epitaxially grown over the substrate, a first metal layer (106) epitaxially grown over the rare earth oxide layer, and a first semiconductor layer (108) epitaxially grown over the first metal layer. 本文描述的系统和方法包括在稀土氧化物和半导体层之间的外延金属层。所述系统和方法据述用于生长分层结构(100)，该结构包括基底(102)，在基底上外延生长的第一稀土氧化物层(104)，在所述稀土氧化物上外延生长的第一金属层(106)层和在所述第一金属层上外延生长的第一半导体层(108)。