OXIDE SINTERED BODY AND METHOD FOR PRODUCING SAME, SPUTTER TARGET, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

• Main Authors: WATATANI KENICHI, TOMINAGA AIKO, TOKUDA KAZUYA, MIYANAGA MIKI, AWATA HIDEAKI
• Format: Patent
• Language: Chinese; English
• Published: 18.06.2019
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SEMICONDUCTOR DEVICES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

Provided are: an oxide sintered body comprising an In2O3 crystal phase, a Zn4In2O7 crystal phase, and a ZnWO4 crystal phase, wherein the circularity of crystal grains formed from the ZnWO4 crystal phase is greater than or equal to 0.01 and less than 0.7; a method for producing the oxide sintered body; and a method for producing a semiconductor device comprising an oxide semiconductor film using the oxide sintered body as a sputter target. 本发明提供：一种包含InO晶相、ZnInO晶相和ZnWO晶相的氧化物烧结材料，其中由所述ZnWO晶相构成的晶粒的圆度大于等于0.01且小于0.7；一种用于制造所述氧化物烧结材料的方法；以及一种用于制造半导体器件的方法，所述半导体器件包含使用所述氧化物烧结材料作为溅射靶而形成的氧化物半导体膜。