Semiconductor device and forming method of integrated chip of image sensor

• Main Authors: KUO CHINIA, WU TUNG-TING, HUANG YIMIN, SZE JHY-JYI
• Format: Patent
• Language: Chinese; English
• Published: 04.06.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure relates to a semiconductor device having a lateral resonance structure to coherently reflect light toward an image sensor. The semiconductor device includes an image sensing element arranged within a substrate. A radiation absorption region is arranged within the substrate and above the image sensor, and contains an array of protrusions having a characteristic dimension andan outer border. A resonant structure containing a plurality of deep trench isolation (DTI) structures is disposed on opposing sides of the image sensing element. The (DTI) structures surround the outer border of the array of protrusions. An inner surface of the DTI structure is laterally spaced apart from the outer border of the array of protrusions by a reflective length based on the characteristic dimension of the array of protrusions, thus affecting coherent reflection of light back toward the image sensor. 本公开实施例关于具有将光同调地朝影像感测器反射的横向共振结构的半导体装置。半导体装置包括影像感测单元配置于基板中。射线吸收区配置于基板中及影像感测器上，并包含具有特征尺寸与外侧边界的凸状物阵列。包含多个深沟槽隔离结构