INSULATION LAYER ETCHANT COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME

An insulation layer etchant composition contains phosphoric acid, a silane compound including at least one of a monofunctional silane compound and a difunctional silane compound, and a remainder of water. A selective etching process with improved time-dependent stability is achieved by the silane co...

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Main Authors YANG YUN-SUK, KIM BYOUNG-MOOK, LEE SEUNG-YONG, CHOI HAN-YOUNG, LEE EUN-JUNG, KWUN GI-JIN
Format Patent
LanguageChinese
English
Published 04.06.2019
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Summary:An insulation layer etchant composition contains phosphoric acid, a silane compound including at least one of a monofunctional silane compound and a difunctional silane compound, and a remainder of water. A selective etching process with improved time-dependent stability is achieved by the silane compound. 一种绝缘层蚀刻剂组合物，包括：磷酸，包含单官能硅烷化合物和二官能硅烷化合物中的至少一种的硅烷化合物，以及余量的水。通过该硅烷化合物实现具有改善的时间相关稳定性的选择性蚀刻工艺。
Bibliography:Application Number: CN201811394747