Sapphire substrate slice polishing method

The invention provides a sapphire substrate slice polishing method. Cleaned sapphire substrate slices are grouped according to the thickness after copper polishing, and the thickness difference of wafers in the same set is within 10 microns; a ceramic disc is provided; the surface flatness of the ce...

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Bibliographic Details
Main Authors WU LU, XU YONGLIANG, SHI HAIBIN, ZHOU BO, WANG LIAOKUO, LIU RUISEN
Format Patent
LanguageChinese
English
Published 28.05.2019
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Summary:The invention provides a sapphire substrate slice polishing method. Cleaned sapphire substrate slices are grouped according to the thickness after copper polishing, and the thickness difference of wafers in the same set is within 10 microns; a ceramic disc is provided; the surface flatness of the ceramic disc is within 3 microns; one set of wafers are uniformly pasted on the surface of the ceramicdisc from the edge by 1 cm by using a wax pasting machine; after wax is cooled, the wafers are fixed on the ceramic disc; polishing cloth of suba600 or suba800 is bonded on the lower disc surface ofa polishing machine; the wafer-pasted surface of the ceramic disc is downwards placed on the polishing cloth; the ceramic disc is pressed by a pressing upper disc to synchronously rotate with an upperdisc; a lower disc is rotated with the upper disc in the same direction; meanwhile, aluminum oxide polishing liquid with a particle size of 80-350 nm is sprayed on the surface of the polishing cloth;the volumetric ratio of the
Bibliography:Application Number: CN201910248636