MULTIPLE SILICON ATOM QUANTUM DOT AND DEVICES INCLUSIVE THEREOF
A multiple- atom silicon quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated silicon surface, each dangling bonds having one of three ionization states of +1, 0or -1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling b...
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Main Authors | , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
24.05.2019
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Subjects | |
Online Access | Get full text |
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Summary: | A multiple- atom silicon quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated silicon surface, each dangling bonds having one of three ionization states of +1, 0or -1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling bonds together in close proximity and having the dangling bond states energetically in the silicon band gap with selective control of the ionization state of one of the dangling bonds. A new class of electronics elements is provided through the inclusion of at least one input and at least one outputto the multiple dangling bonds. Selective modification or creation of a dangling bond is also detailed.
提供一种多原子硅量子点,其在另外的H封端硅表面上包括多个悬空键,每个悬空键具有+1、0或-1的三种电离状态中的一种并且分别对应于悬空键状态下的0、1或2个电子。悬空键紧密靠近在一起并且在硅带隙中能量上具有悬空键状态,并且选择性地控制一个悬空键的电离状态。通过在多个悬空键中包括至少一个输入和至少一个输出来提供一类新的电子元件。还详细说明了选择性修改或创建悬空键。 |
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Bibliography: | Application Number: CN201780055742 |