Method for preparing high-pure nanometer silicon

• Main Authors: PENG YANGCHENG, WANG ZHIYONG, CHEN SONG, LI YU, PI TAO, HUANG YUEHUA, LI NENG, YU MENGZE, SHAO HAOMING
• Format: Patent
• Language: Chinese; English
• Published: 21.05.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOUNDS THEREOF; ELECTRICITY; INORGANIC CHEMISTRY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; NANOTECHNOLOGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

The invention relates to a method for preparing high-pure nanometer silicon. The method comprises the following steps: performing disproportionation on subsilicon oxide raw material, and then etchingproduct after disproportionation, and placing the etching product on a Buchner funnel on the etching product; externally connecting a suction flask, washing by using deionized water, removing hydrofluoric acid until the pH value is neutral; and then drying by using a vacuum oven to obtain porous silicon, placing the porous silicon in a ball mill to perform ball-milling so as to obtain a nanometersilicon finished product. The method disclosed by the invention is simple in process and high in yield, the obtained nanometer silicon purity is high, and the nanometer silicon size is small. 本发明涉及一种制备高纯纳米硅的方法，包括以下步骤：将氧化亚硅原料进行歧化，然后对歧化后的产物进行刻蚀，再将上述刻蚀产物置于布氏漏斗上，外接抽滤瓶，用去离子水水洗，去除氢氟酸，直至pH值为中性，然后用真空烘箱干燥，得到多孔硅，将上述多孔硅置于球磨机中进行球磨，得到纳米硅成品。本发明工艺简单，产率高，所得纳米硅纯度高，纳米硅尺寸小。