Interconnection structure and formation method thereof

• Main Authors: WANG ZHIDONG, YUAN KEFANG, ZHOU JUNQING, ZHANG HAIYANG
• Format: Patent
• Language: Chinese; English
• Published: 14.05.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to an interconnection structure and a formation method thereof. The formation method comprises the steps that a substrate is formed, and a dielectric layer is arranged on the substrate; a groove is formed in the dielectric layer, and the groove penetrates through the dielectric layer with the partial thickness; a protective layer is formed on the dielectric layer at least onthe side wall and the bottom of the groove; and after the protective layer is formed, a contact hole is formed in the bottom of the groove, wherein the contact hole penetrates through the dielectric layer with the rest thickness. Through the formation of the protective layer, in the forming process of the contact hole, the dielectric layer exposed by the bottom and the side wall of the groove is protected, so that the formation of the contact hole is effectively improved, the quality of the dielectric layer is increased, the performance of the dielectric layer after the interconnection structure is formed and the perf