Ultrathin silicon PIN radiation detector based on bonding substrate and preparation method thereof

• Main Authors: ZHANG XIANGYANG, ZHAO JIANGBIN, YANG FANGDONG, HE GAOKUI, HAO XIAOYONG
• Format: Patent
• Language: Chinese; English
• Published: 07.05.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a silicon PIN radiation detector and a preparation method thereof. The silicon PIN radiation detector comprises a device layer silicon wafer (1) and a support layer silicon wafer (4) which are connected by bonding and between which a first silicon dioxide layer (2) is formed; an N+ region (3) formed on a surface of the device layer silicon wafer (1) for bonding; a P+ region(6) formed on a surface, opposite to the surface for bonding, of the device layer silicon wafer (1), wherein the P+ region (6) is covered with a thin metal layer (8), and the edge of the thin metal layer (8) is provided with a field plate (7); and a second silicon dioxide layer (5) formed on a surface of the device layer silicon wafer (1) except the P+ region (6). The support layer silicon wafer (4) is provided with a cavity structure (10) at a position corresponding to the N+ region (3). The surfaces of the support layer silicon wafer (4) and the cavity structure (10) are covered with a thickmetal layer (11). The det