Ultrathin silicon PIN radiation detector based on bonding substrate and preparation method thereof
The invention provides a silicon PIN radiation detector and a preparation method thereof. The silicon PIN radiation detector comprises a device layer silicon wafer (1) and a support layer silicon wafer (4) which are connected by bonding and between which a first silicon dioxide layer (2) is formed;...
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
07.05.2019
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides a silicon PIN radiation detector and a preparation method thereof. The silicon PIN radiation detector comprises a device layer silicon wafer (1) and a support layer silicon wafer (4) which are connected by bonding and between which a first silicon dioxide layer (2) is formed; an N+ region (3) formed on a surface of the device layer silicon wafer (1) for bonding; a P+ region(6) formed on a surface, opposite to the surface for bonding, of the device layer silicon wafer (1), wherein the P+ region (6) is covered with a thin metal layer (8), and the edge of the thin metal layer (8) is provided with a field plate (7); and a second silicon dioxide layer (5) formed on a surface of the device layer silicon wafer (1) except the P+ region (6). The support layer silicon wafer (4) is provided with a cavity structure (10) at a position corresponding to the N+ region (3). The surfaces of the support layer silicon wafer (4) and the cavity structure (10) are covered with a thickmetal layer (11). The det |
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Bibliography: | Application Number: CN201811621988 |