Band-gap reference circuit and high-order temperature compensation method
The invention discloses a band-gap reference circuit and a high-order temperature compensation method. The band-gap reference circuit comprises a start-up circuit, a bias circuit, and a high-order compensated band-gap reference voltage generation circuit. The compensation method for the high-order c...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
07.05.2019
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a band-gap reference circuit and a high-order temperature compensation method. The band-gap reference circuit comprises a start-up circuit, a bias circuit, and a high-order compensated band-gap reference voltage generation circuit. The compensation method for the high-order compensated band-gap reference voltage generation circuit is to perform a curvature correction by using a sub-threshold current of the CMOS (Complementary Metal Oxide Semiconductor) transistor, to obtain a high-order temperature compensated band-gap reference voltage source circuit. According to theband-gap reference circuit and the high-order temperature compensation method, the circuit has the advantages that the precision of a band-gap reference source can be greatly improved by not increasing the complexity of the circuit, the power consumption is reduced, the chip area is reduced, and the cost is saved.
本发明公开了一种带隙基准电路及高阶温度补偿方法,包括:启动电路、偏置电路和高阶补偿的带隙基准电压产生电路,其中,所述高阶补偿的带隙基准电压产生电路,该电路的补偿方法是利用CMOS晶体管的亚阈值电流进行曲率校正,得到高阶 |
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Bibliography: | Application Number: CN201811033528 |