Diode and manufacturing method, array substrate and display panel thereof
The invention discloses a diode and a manufacturing method, an array substrate and a display panel thereof, and belongs to the technical field of display. The diode comprises a substrate, a buffer layer is arranged on one side of the substrate, a first film, a second film and a third film are arrang...
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
26.04.2019
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a diode and a manufacturing method, an array substrate and a display panel thereof, and belongs to the technical field of display. The diode comprises a substrate, a buffer layer is arranged on one side of the substrate, a first film, a second film and a third film are arranged on one side of the buffer layer away from the substrate, the first film is a polysilicon film, the second film is an amorphous silicon film, and the third film is the polysilicon film or the amorphous silicon film; a diode includes at least a first portion, a second portion, a third portion, a first electrode and a second electrode, the first portion is located in the first film, the second portion is located in the second film, and the third portion is located in the third film; the first electrode is electrically connected to the first portion, and the second electrode is electrically connected to the third portion. The light flux and the photosensitivity of the diode can be increased while the absorption of t |
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Bibliography: | Application Number: CN201811612490 |