High-density phase change memory and preparation method thereof

• Main Authors: CHEN SHOUMIAN, ZHONG MIN, LI MING
• Format: Patent
• Language: Chinese; English
• Published: 26.04.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a high-density phase change memory including a Schottky diode, a phase change layer and an upper electrode from bottom to top. The Schottky diode includes a semiconductor layerand a metal layer forming a Schottky barrier with the semiconductor layer. The metal layer serves as a lower electrode of the phase change layer at the same time. The semiconductor layer, the metal layer, the phase change layer and the upper electrode are of a flat layer structure stacked from bottom to top, or the semiconductor layer, the phase change layer and the upper electrode are of a planar structure arranged from bottom to top, the metal layer is connected with a planar bottom surface and a vertical sidewall, the metal layer is overlapped with the semiconductor layer below the metal layer through the bottom surface and is connected to the phase change layer above the metal layer through the sidewall, and the phase change layer is stacked on the upper electrode. The memory can effectively improve the densi